[[abstract]]We report the carrier dynamics in a spontaneously organized array of quantum wires grown by a novel technique that involves strain induced lateral ordering (SILO). Our cw–photoluminescence (PL) measurements reveal a very strong optical anisotropy associated with these wires, while the time‐resolved PL measurements demonstrate a very interesting carrier dynamics due to localization of excitons and slow interwire scattering. The high quality and freedom from defects of the SILO multiple quantum wire array are nicely borne out by the long decay photoluminescence times (∼4 ns).[[fileno]]2030161010086[[department]]電機工程學
A coupled GaAs/AlGaAs quantum wire (QWR)-dot sample grown by molecular beam epitaxy on a patterned (...
Semiconductors nanostructures are fabricated using a range of techniques which inevitably have an im...
International audienceWe have carried out a detailed optical characterization of a single CdSe quant...
[[abstract]]We present a generalized strain-balance theory on the strain-induced lateral-layer order...
A host of optical techniques have been utilized to carefully study the quantum wires grown via stra...
[[abstract]]Quantum wire heterostructures have been grown in situ using gas source molecular beam ep...
[[abstract]]Phase separation in III–V semiconductors has led to a unique method for fabricating quan...
Research is currently underway on a variety of approaches to improve semiconductor laser performance...
Significant optical nonlinearity has been found in InGaAs (311)A sidewall quantum wires by means of ...
[[abstract]]We have established an in situ technique, the strain-induced lateral-layer ordering (SIL...
[[abstract]]A GaxIn1−xP/Ga0.51In0.49P multiple‐quantum‐wire heterostructure was formed in situ throu...
The authors report on the optical properties of 3-fold stacked InGaAs sidewall quantum wires (QWires...
[[abstract]]Utilizing the strain‐induced lateral‐layer ordering (SILO) process, we have grown GaxIn1...
[[abstract]]The carrier transport in strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QW...
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs mul...
A coupled GaAs/AlGaAs quantum wire (QWR)-dot sample grown by molecular beam epitaxy on a patterned (...
Semiconductors nanostructures are fabricated using a range of techniques which inevitably have an im...
International audienceWe have carried out a detailed optical characterization of a single CdSe quant...
[[abstract]]We present a generalized strain-balance theory on the strain-induced lateral-layer order...
A host of optical techniques have been utilized to carefully study the quantum wires grown via stra...
[[abstract]]Quantum wire heterostructures have been grown in situ using gas source molecular beam ep...
[[abstract]]Phase separation in III–V semiconductors has led to a unique method for fabricating quan...
Research is currently underway on a variety of approaches to improve semiconductor laser performance...
Significant optical nonlinearity has been found in InGaAs (311)A sidewall quantum wires by means of ...
[[abstract]]We have established an in situ technique, the strain-induced lateral-layer ordering (SIL...
[[abstract]]A GaxIn1−xP/Ga0.51In0.49P multiple‐quantum‐wire heterostructure was formed in situ throu...
The authors report on the optical properties of 3-fold stacked InGaAs sidewall quantum wires (QWires...
[[abstract]]Utilizing the strain‐induced lateral‐layer ordering (SILO) process, we have grown GaxIn1...
[[abstract]]The carrier transport in strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QW...
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs mul...
A coupled GaAs/AlGaAs quantum wire (QWR)-dot sample grown by molecular beam epitaxy on a patterned (...
Semiconductors nanostructures are fabricated using a range of techniques which inevitably have an im...
International audienceWe have carried out a detailed optical characterization of a single CdSe quant...