Add to ORKG[[abstract]]In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic InxGa1-xP buffered GaAs with ultra-low dark current of 3.6fA/µm2, switching response of 41ps, bit-error-rate of 10-12, and sensitivity of -19dBm are reported.[[fileno]]2030123010037[[department]]電機工程學
International audienceThis paper reports on pin photodiode frequency response optimization based on ...
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode a...
A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission s...
[[abstract]]In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorph...
[[abstract]]The SONET OC-192 receiving performance of In0.53 Ga0.47As p-i-n photodiode grown on line...
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using...
A novel top-illuminated metamorphic In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substr...
Pseudomorphic In0.6Ga0.4As/In0.52Al0.48As 1 μm gate modulation‐doped field‐effect transistors have b...
A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insu...
Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu...
109 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.Long wavelength In0.53Ga0.47A...
Various emerging applications such as high-performance computing (HPC) have been pushing the speed l...
Increasing reliance on the Internet places greater and greater demands for high -speed optical commu...
Increasing reliance on the Internet places greater and greater demands for high-speed optical commun...
Abstract—We report p-i-n type InSb-based high-speed photode-tectors grown on GaAs substrate. Electri...
International audienceThis paper reports on pin photodiode frequency response optimization based on ...
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode a...
A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission s...
[[abstract]]In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorph...
[[abstract]]The SONET OC-192 receiving performance of In0.53 Ga0.47As p-i-n photodiode grown on line...
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using...
A novel top-illuminated metamorphic In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substr...
Pseudomorphic In0.6Ga0.4As/In0.52Al0.48As 1 μm gate modulation‐doped field‐effect transistors have b...
A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insu...
Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu...
109 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.Long wavelength In0.53Ga0.47A...
Various emerging applications such as high-performance computing (HPC) have been pushing the speed l...
Increasing reliance on the Internet places greater and greater demands for high -speed optical commu...
Increasing reliance on the Internet places greater and greater demands for high-speed optical commun...
Abstract—We report p-i-n type InSb-based high-speed photode-tectors grown on GaAs substrate. Electri...
International audienceThis paper reports on pin photodiode frequency response optimization based on ...
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode a...
A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission s...