An optical method for studying carrier diffusion in strained (InP)2/(GaP)2 quantum wires

[[abstract]]The carrier transport in strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QWR) samples was examined with a noncontact Haynes–Shockley diffusion measurement which utilized time-resolved scanning cathodoluminescence. An anisotropy in ambipolar diffusion along the [110] and [110] directions (perpendicular and parallel to the QWRs, respectively) was observed. The temperature dependence of this anisotropy was measured, revealing that carrier diffusion along the QWR direction is thermally activated.[[fileno]]2030161010066[[department]]電機工程學