[[abstract]]A 70-GHz broadband amplifier is realized in a 0.13- m CMOS technology. By using five cascaded common- source stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB under a power consumption hgA of 79.5 mW. Within the circuit bandwidth, the maximum input and output reflection coefficients are 6.1 and 10.8 dB, respectively. The group delay variation is sion point is 0.2 dBm at 5 GHz.With the miniaturized transformer design, the occupied core area of the circuit is only 12.0 ps, and the output 1-dB compres- 0.05 mmP. This amplifier demonstrates a gain-bandwidth product of 231GHz and aqf hg up to 2.9 GHz/mW.[[fileno]]2030121010039[[department]]電機工程學
[[abstract]]A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matchi...
[[abstract]]A 60-GHz fully-integrated and broadband distributed active transformer (DAT) power ampli...
This paper presents a differential 19.6–39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS t...
[[abstract]]A 70-GHz broadband amplifier is realized in a 0.13-mum CMOS technology. By using five ca...
The range of radar and communication systems working in the atmospheric window around 140 GHz strong...
This paper presents a broadband H-Band (220 -325 GHz) power amplifier in a 35nm InGaAs-based metamor...
A 60 GHz power amplifier with 20 dB small signal gain is designed and fabricated using standard 1P7M...
[[abstract]]A 55-71-GHz fully integrated power amplifier (PA) using a distributed active transformer...
This letter describes an ultra-broadband power amplifier (PA) in a 130 nm SiGe:C BiCMOS technology. ...
A compact and broadband high-gain amplifier has been developed and is presented in this paper. It is...
In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is ...
International audienceA 60 GHz highly linear Power Amplifier (PA) is implemented in 65-nm Low Power ...
A novel broadband transformer-based CMOS power amplifier (PA) design method is studied in this artic...
A broadband amplifier has been designed with a low noise figure up to 7 GHz using a standard 0.8 µm ...
This paper presents an E-band (60 - 90 GHz) balanced driver amplifier in a 50nm InGaAs-based metamor...
[[abstract]]A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matchi...
[[abstract]]A 60-GHz fully-integrated and broadband distributed active transformer (DAT) power ampli...
This paper presents a differential 19.6–39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS t...
[[abstract]]A 70-GHz broadband amplifier is realized in a 0.13-mum CMOS technology. By using five ca...
The range of radar and communication systems working in the atmospheric window around 140 GHz strong...
This paper presents a broadband H-Band (220 -325 GHz) power amplifier in a 35nm InGaAs-based metamor...
A 60 GHz power amplifier with 20 dB small signal gain is designed and fabricated using standard 1P7M...
[[abstract]]A 55-71-GHz fully integrated power amplifier (PA) using a distributed active transformer...
This letter describes an ultra-broadband power amplifier (PA) in a 130 nm SiGe:C BiCMOS technology. ...
A compact and broadband high-gain amplifier has been developed and is presented in this paper. It is...
In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is ...
International audienceA 60 GHz highly linear Power Amplifier (PA) is implemented in 65-nm Low Power ...
A novel broadband transformer-based CMOS power amplifier (PA) design method is studied in this artic...
A broadband amplifier has been designed with a low noise figure up to 7 GHz using a standard 0.8 µm ...
This paper presents an E-band (60 - 90 GHz) balanced driver amplifier in a 50nm InGaAs-based metamor...
[[abstract]]A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matchi...
[[abstract]]A 60-GHz fully-integrated and broadband distributed active transformer (DAT) power ampli...
This paper presents a differential 19.6–39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS t...