A compact 0.1 GHz to 14 GHz ultra-wideband low noise amplifier in 0.13-μm CMOS

[[abstract]]A compact ultra-wideband low-noise amplifier (LNA) with a 12.4-dB maximum gain, a 2.7-dB minimum noise figure (NF), and a bandwidth over 0.1-14 GHz is realized in a 0.13-μm CMOS technology. The circuit is basically an inductorless configuration using the resistive-feedback and current-reuse techniques for wideband and high-gain characteristics. It was found that a small inductor of only 0.4 nH can greatly improve the circuit performance, which enhances the bandwidth by 23%, and reduces the NF by 0.94 dB (at 10.6 GHz), while only consuming an additional area of 80 × 80 μm2. The LNA only occupies a core area of 0.031 mm , and consumes 14.4 mW from a 1.8-V supply.[[fileno]]2030121010029[[department]]電機工程學