[[abstract]]We report a theoretical study of the noise properties of an ultrasmall resonant-tunneling structure. An analytical expression is derived for the noise power spectrum with the equation-of-motion method. We study the noise behavior as a function of both the bias voltage and the barrier characteristics, and find that the correlation between electrons induced by the Coulomb repulsion can suppress the noise significantly, and should be observable in a noise measurement.[[fileno]]2030120010028[[department]]電機工程學
We report shot noise measurements performed in mesoscopic tunnel barriers fabricated in a GaAs∕AlGaA...
We investigate the noise properties of a GaAs/AlxGa 1-xAs resonant-tunneling structure at bias volta...
9 pagesInternational audienceWe consider a tunnel junction formed between a fixed electrode and an o...
Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below t...
We present results from noise measurements on double barrier resonant tunnel diodes, down to extreme...
We implement a quantum approach which includes long range Coulomb interaction and investigate curren...
Noise in resonance tunnel diodes based on InGaAlAs structures is studied at two frequencies. A shot...
International audienceWe observe the suppression of the finite frequency shot-noise produced by a vo...
Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below th...
We have studied the dependence of noise characteristics on the dimension of electron confinement of ...
We have investigated the asymptotic behavior of normal tunnel junctions at voltages where even the b...
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-de...
The effects of Macroscopic Quantum Tunneling (MQT) and Coulomb Blockade (CB) in Josephson junctions ...
A quantum Markovian master equation is derived to describe the current noise in resonant tunneling d...
A new theoretical approach to current noise in resonant tunnelling is proposed and applied to variou...
We report shot noise measurements performed in mesoscopic tunnel barriers fabricated in a GaAs∕AlGaA...
We investigate the noise properties of a GaAs/AlxGa 1-xAs resonant-tunneling structure at bias volta...
9 pagesInternational audienceWe consider a tunnel junction formed between a fixed electrode and an o...
Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below t...
We present results from noise measurements on double barrier resonant tunnel diodes, down to extreme...
We implement a quantum approach which includes long range Coulomb interaction and investigate curren...
Noise in resonance tunnel diodes based on InGaAlAs structures is studied at two frequencies. A shot...
International audienceWe observe the suppression of the finite frequency shot-noise produced by a vo...
Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below th...
We have studied the dependence of noise characteristics on the dimension of electron confinement of ...
We have investigated the asymptotic behavior of normal tunnel junctions at voltages where even the b...
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-de...
The effects of Macroscopic Quantum Tunneling (MQT) and Coulomb Blockade (CB) in Josephson junctions ...
A quantum Markovian master equation is derived to describe the current noise in resonant tunneling d...
A new theoretical approach to current noise in resonant tunnelling is proposed and applied to variou...
We report shot noise measurements performed in mesoscopic tunnel barriers fabricated in a GaAs∕AlGaA...
We investigate the noise properties of a GaAs/AlxGa 1-xAs resonant-tunneling structure at bias volta...
9 pagesInternational audienceWe consider a tunnel junction formed between a fixed electrode and an o...