Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy

[[abstract]]Electrical and optical measurements of InGaAsP layers grown by liquid-phase epitaxy with different amounts of Er metal (0-0.60 wt %) added to growth solutions are reported. The presence of Er during growth causes the decrease of electron concentration and the strong suppression of donor-related optical transitions due to the effective removal of donors. The characteristic Er3+ emission lines located in the 1.503-1.542 mum region can only be detected in the 1.3 mum wavelength Er-doped InGaAsP layers. We attribute it to be the formation of a new type of Er3+ center in the InGaAsP host.[[fileno]]2030154010122[[department]]電機工程學