Luminescence of N-implanted In0.32Ga0.68P grown by liquid-phase epitaxy

[[abstract]]The photoluminescence spectra of N-implanted In0.32Ga0.68P epitaxial layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy have been investigated at different annealing temperatures and times by the rapid thermal annealing technique. The nitrogen level is located approximately 110 meV below the GAMMA-band minimum for the In0.32Ga0.68P crystal. The activation energy necessary to place N atoms into sites to form the N-isoelectronic trap is 0.47 and 0.48 eV in Ar and N2 ambients, respectively. The optimum post-implantation annealing condition to obtain the maximum isoelectronic trap emission intensity is at 800-degrees-C for 30-s duration in both Ar and N2 ambients.[[fileno]]2030154010119[[department]]電機工程學