Photoluminescence study of rapid thermal annealing from nitrogen-implanted In0.32Ga0.68P

[[abstract]]Photoluminescence studies were performed to evaluate the results of rapid thermal annealing of nitrogen-implanted In0.32Ga0.68P layers, which were grown on GaAs0.61P0.39 substrates by a supercooling liquid-phase-epitaxial method. When the annealing temperature used is between 600 and 840-degrees-C with 30 s duration, the N isoelectronic trap can be activated with an activation energy of 0.48 eV which is necessary to place N atoms into P sites. The 9 K photoluminescence spectrum is dominated by the sharp near-band-gap peak E(g-GAMMA) and the broad N-related band N(x). The N level is located approximately 110 meV below the GAMMA-band minimum for the In0.32Ga0.68P alloy. By selecting different annealing temperatures and times, the optimum annealing condition to obtain the strongest emission intensity of the band N(x) is at T = 800-degrees-C and 30 s duration.[[fileno]]2030154010117[[department]]電機工程學