Temperature dependence of photoluminescence from Mg-doped In0.5Ga0.5P grown by liquid-phase epitaxy

[[abstract]]The temperature dependence of photoluminescence from the Mg-doped In0.5Ga0.5P layers on (100) GaAs substrates grown by liquid-phase epitaxy has been studied. At low temperature, the spectra show only two major emission peaks involving intrinsic recombination and conduction-band-to-acceptor transition. The intrinsic recombination dominates in the doping concentration range studied (1.0×1017-7.0×1018 cm-3) above 60 K. Below 50 K, these two peaks merged with each other when the doping concentration is higher than 1×1018 cm-3. The temperature dependence of band gap in In0.5Ga0.5P layers determined from the photoluminescence peak energy varies as 1.976-[7.5×10-4 T2/(T+500)] eV. For the moderately doped concentration (p