[[abstract]]We examine two assumptions commonly used in analytical studies of inverter transient performances, that the transcapacitive current during a transient and the distributive gate resistance are negligible. We derive the additional delay time expressions which need to be added to the delay times calculated with such assumptions. In addition, we propose an equivalent lumped transistor which accurately models the transient behavior of the transistor with a distributive gate resistance[[fileno]]2030153010004[[department]]電機工程學
The effect of interconnect coupling capacitance on the transient characteristics of a CMOS logic gat...
One of the main challenges in the development of graphene field-effect transistors (GFETs) forapplic...
In this paper an accurate, analytical model for the evaluation of the CMOS inverter delay in the sub...
International audienceDelay estimation is a crucial task in digital circuit design as it provides th...
This paper presents a new analytical propagation delay model for nanoscale CMOS inverters. By using ...
An accurate and fast technique has been developed for computing the supply current as well as the de...
Due to the continual development of the CMOS IC technology, there is a corresponding strong demand f...
We present formula of propagation delay for static CMOS logic gates considering short-circuit curren...
An analytical model for computing the supply current, delay, and power of a submicron CMOS inverter ...
Delay evaluation is always a crucial concern in the VLSI de-sign and it becomes increasingly more cr...
Two parameters that contribute significantly in a CMOS inverter delay are the output load and propag...
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The Insulated Gate Bipolar Transistor is widely accepted as the preferred switching device in a vari...
An accurate and efficient method is presented for computing the supply current pulse and delay in a ...
The effect of interconnect coupling capacitance on the transient characteristics of a CMOS logic gat...
One of the main challenges in the development of graphene field-effect transistors (GFETs) forapplic...
In this paper an accurate, analytical model for the evaluation of the CMOS inverter delay in the sub...
International audienceDelay estimation is a crucial task in digital circuit design as it provides th...
This paper presents a new analytical propagation delay model for nanoscale CMOS inverters. By using ...
An accurate and fast technique has been developed for computing the supply current as well as the de...
Due to the continual development of the CMOS IC technology, there is a corresponding strong demand f...
We present formula of propagation delay for static CMOS logic gates considering short-circuit curren...
An analytical model for computing the supply current, delay, and power of a submicron CMOS inverter ...
Delay evaluation is always a crucial concern in the VLSI de-sign and it becomes increasingly more cr...
Two parameters that contribute significantly in a CMOS inverter delay are the output load and propag...
In this paper, a closed form delay and power model of a CMOS inverter driving a resistive-inductive-...
Abstract – A delay and power model of a CMOS inverter driving a resistive-capacitive load is present...
The Insulated Gate Bipolar Transistor is widely accepted as the preferred switching device in a vari...
An accurate and efficient method is presented for computing the supply current pulse and delay in a ...
The effect of interconnect coupling capacitance on the transient characteristics of a CMOS logic gat...
One of the main challenges in the development of graphene field-effect transistors (GFETs) forapplic...
In this paper an accurate, analytical model for the evaluation of the CMOS inverter delay in the sub...