An analytical model of short-channel effect for metal-oxide-semiconductor field-effect transistor with insulated shallow extension

[[abstract]]In this paper, we present an analytical short-channel threshold voltage model without any fitting parameter for the metal-oxide-semiconductor field-effect Transistor (MOSFET) with insulated shallow extension (ISE). Excellent agreements between the numerical simulated results and this model are obtained. Very good suppression of the short-channel effect is observed for this ISE MOSFET. Both the sidewall-oxide thickness and shallow-extension depth play a major role in containing the short-channel effect. The threshold-voltage equation is found by using the effective-doping model. The effective doping is derived from the knowledge of the channel potential. The channel potential is obtained by the scale-length approach to solve 2D Poisson's equation.[[fileno]]2030103010021[[department]]電機工程學