[[abstract]]High-quality GaAsSb epitaxial layers lattice-matched to InP are required to construct ultra-highspeed (fT>500 GHz) InP/GaAsSb/InP double heterojunction bipolar transistors. The issues of achieving high-quality GaAsSb/InP heterostructures growth by gas source molecular beam epitaxy are reviewed.[[fileno]]2030161030004[[department]]電機工程學
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and o...
As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz pow...
The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar ...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.In this work, GaAsSb-based dou...
For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds ...
[[abstract]]High quality GaAsSb/InP double heterojunction bipolar transistor (DHBT) structures were ...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...
[[abstract]]Bulk GaAsSb samples were grown lattice matched to InP substrates at different temperatur...
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carr...
[[abstract]]High electron mobility and low defect density InAsSb lattice-matched to AlSb has been su...
[[abstract]]High-quality InAs0.8Sb0.2 lattice matched to AlSb has been successfully grown on semi-in...
Gallium-arsenide-antimonide-based indium phosphide double heterojunction bipolar transistors (InP/Ga...
82 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.The subject of this work is th...
measurements show the high quality of the growth and demonstrate that thick AlGaAsSb/InP heterostruc...
The prevalence of mobile computing devices and emerging demand for high data rate communication have...
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and o...
As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz pow...
The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar ...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.In this work, GaAsSb-based dou...
For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds ...
[[abstract]]High quality GaAsSb/InP double heterojunction bipolar transistor (DHBT) structures were ...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...
[[abstract]]Bulk GaAsSb samples were grown lattice matched to InP substrates at different temperatur...
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carr...
[[abstract]]High electron mobility and low defect density InAsSb lattice-matched to AlSb has been su...
[[abstract]]High-quality InAs0.8Sb0.2 lattice matched to AlSb has been successfully grown on semi-in...
Gallium-arsenide-antimonide-based indium phosphide double heterojunction bipolar transistors (InP/Ga...
82 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.The subject of this work is th...
measurements show the high quality of the growth and demonstrate that thick AlGaAsSb/InP heterostruc...
The prevalence of mobile computing devices and emerging demand for high data rate communication have...
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and o...
As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz pow...
The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar ...
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