[[abstract]]High electron mobility and low defect density InAsSb lattice-matched to AlSb has been successfully grown on InP substrates by gas source molecular beam epitaxy using a Sb surfactant buffer layer structure. High electron mobility transistors based on this heterostructure have been demonstrated.[[fileno]]2030161030002[[department]]電機工程學
The electron densities in the channel of Si delta -doped InGaAs-InAlAs high electron mobility transi...
We study the effect of Sb mediated growth on InAs layers on AlAsSb on InP substrate. The structural ...
High quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and...
[[abstract]]High-quality InAs0.8Sb0.2 lattice matched to AlSb has been successfully grown on semi-in...
For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds ...
InAs quantum wells can serve as the channel for high-electron-mobility transistors. Structures are t...
[[abstract]]High-quality GaAsSb epitaxial layers lattice-matched to InP are required to construct ul...
[[abstract]]High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy wa...
A series of undoped InSb and InAsxSb1-x layers were grown using tetramer Sb4 and As4 sources on (100...
La nécessité de diminuer la consommation à la fois des systèmes autonomes communicants à haute fréqu...
In this study, we first present the process of the melt epitaxial (ME) growth method, and the improv...
High-quality InGaAs/InAlAs/InP high-electron-mobility transistor (HEMT) structures with lattice-matc...
We report on the molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility...
The growth of epitaxial InSb layers on highly lattice-mismatched semi-insulating GaAs substrates has...
Molecular‐beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good ele...
The electron densities in the channel of Si delta -doped InGaAs-InAlAs high electron mobility transi...
We study the effect of Sb mediated growth on InAs layers on AlAsSb on InP substrate. The structural ...
High quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and...
[[abstract]]High-quality InAs0.8Sb0.2 lattice matched to AlSb has been successfully grown on semi-in...
For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds ...
InAs quantum wells can serve as the channel for high-electron-mobility transistors. Structures are t...
[[abstract]]High-quality GaAsSb epitaxial layers lattice-matched to InP are required to construct ul...
[[abstract]]High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy wa...
A series of undoped InSb and InAsxSb1-x layers were grown using tetramer Sb4 and As4 sources on (100...
La nécessité de diminuer la consommation à la fois des systèmes autonomes communicants à haute fréqu...
In this study, we first present the process of the melt epitaxial (ME) growth method, and the improv...
High-quality InGaAs/InAlAs/InP high-electron-mobility transistor (HEMT) structures with lattice-matc...
We report on the molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility...
The growth of epitaxial InSb layers on highly lattice-mismatched semi-insulating GaAs substrates has...
Molecular‐beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good ele...
The electron densities in the channel of Si delta -doped InGaAs-InAlAs high electron mobility transi...
We study the effect of Sb mediated growth on InAs layers on AlAsSb on InP substrate. The structural ...
High quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and...
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