[[abstract]]Sputtered Ta-Six nanostructure film was investigated as a barrier material for Cu metallization. The TaSix film was deposited by co-sputtering of Ta and Si targets in Ar gas. The resistivity of the films varies from 238 μΩ-cm to 900 μΩ-cm with Si/Ta ratio from 0.256 to 2.172. XRD, HRTEM, XPS, and AES were employed to understand the crystalline structure, chemical structure, and atomic composition. Furthermore, we use C-V measurement to study the thermal stability of the TaSi film. The MOS capacitors of sputtered Cu or electroplating Cu/Ta-Si (30 nm)/methylsilsesquioxane (MSQ), porous SiO2 or SiO2/p-Si structure were annealed at the temperature from 350°C to 500°C for 30 min in nitrogen ambient. The MSQ and porous SiO2 films with...
In this paper we presented the diffusion behavior of 39K, 40Ca, 48Ti, 51V, 52Cr and 55Mn ion implant...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
Diffusion barrier properties of very thin sputtered Ta and reactively sputtered TaN films used as a ...
The reactions in the Si/Ta/Cu metallization system produced by the sputtering process were investiga...
The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates ...
We have studied sputter-deposited Ta, Ta36Si14, and Ta36Si14N50 thin films as diffusion barriers bet...
This dissertation presents a study of Ta-based Cu diffusion barrier for advanced semiconductor techn...
The reaction mechanisms in the Si/Ta/Cu metallization system and their relation to the microstructur...
Ta-Si-N(10 nm)/Zr(20 nm) bilayer diffusion barrier was prepared between n-type silicon(100) wafer an...
[[abstract]]Tantalum-based thin metal films between Al and Si exhibit high- temperature stability. T...
a b s t r a c t One of the most important processes in Cu metallization for highly integrated circui...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatur...
Tantalum silicide (TaSi2) thin films were sputter deposited on p- type and n- type silicon substrate...
The interfacial reactions of the Cu(100nm)/Ta(50nm)/Si structures and their relationship with the mi...
In this paper we presented the diffusion behavior of 39K, 40Ca, 48Ti, 51V, 52Cr and 55Mn ion implant...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
Diffusion barrier properties of very thin sputtered Ta and reactively sputtered TaN films used as a ...
The reactions in the Si/Ta/Cu metallization system produced by the sputtering process were investiga...
The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates ...
We have studied sputter-deposited Ta, Ta36Si14, and Ta36Si14N50 thin films as diffusion barriers bet...
This dissertation presents a study of Ta-based Cu diffusion barrier for advanced semiconductor techn...
The reaction mechanisms in the Si/Ta/Cu metallization system and their relation to the microstructur...
Ta-Si-N(10 nm)/Zr(20 nm) bilayer diffusion barrier was prepared between n-type silicon(100) wafer an...
[[abstract]]Tantalum-based thin metal films between Al and Si exhibit high- temperature stability. T...
a b s t r a c t One of the most important processes in Cu metallization for highly integrated circui...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatur...
Tantalum silicide (TaSi2) thin films were sputter deposited on p- type and n- type silicon substrate...
The interfacial reactions of the Cu(100nm)/Ta(50nm)/Si structures and their relationship with the mi...
In this paper we presented the diffusion behavior of 39K, 40Ca, 48Ti, 51V, 52Cr and 55Mn ion implant...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
Diffusion barrier properties of very thin sputtered Ta and reactively sputtered TaN films used as a ...