A Poly-Si Thermoelectric Cooling Device Fabricated by Surface Micromachining Technology

[[abstract]]In this paper, for the first time, we present a novel on-chip integrated poly-Si TE (thermoelectric) cooling device fabricated by surface micromachining technology. The area of the bridge type Peltier element is about ∼40×40 (μm2) and there are about ∼62,500 elements in 1 (cm2) chip area. Using the sacrificial oxide released bridge type Peltier element, the parasitic thermal conduction effect can be minimized. The cooling mode TE device can achieve 5-15°C reduction from the surrounding environment under 80 mA current drive.[[fileno]]2030168030002[[department]]電機工程學