Photoluminescence in CuGaSe2 Thin Films Grown by Molecular Beam Epitaxy

[[abstract]]Photoluminescence properties of CuGaSe2 films grown by molecular beam epitaxy were studied. According to the annealing results, the emission peaks at 1.671, 1.640 and 1.610 eV found in a Cu-rich film are due to the VSe→VGa, Cui→CuGa, and Cui→VGa transition, respectively. For the film with a near-stoichiometric composition, the emission peaks at 1.653, 1.623, and 1.581 eV are caused by the VSe→VCu, VSe→CuGa, and GaCu→VCu transition, respectively[[fileno]]2030170030052[[department]]電機工程學