Bandgap Engineering in Hydrogenated Silicon Films Made by Combined Hydrogen Dilution and Atomic Hydrogen Treatment

[[abstract]]Effective bandgap modifications of hydrogenated silicon are demonstrated in this work. These films were obtained by (combined) hydrogen dilution and atomic hydrogen treatments during the deposition. The Si-H bonding configurations were characterized by NMR measurements. The hydrogen dilution tends to create a very sharp line-shape in the NMR spectra as the dilution ratio is increased and the addition of atomic hydrogen treatment can produce the same NMR spectra even at a lower temperature. The optical bandgap of these Si:H samples showed the same tendency that the bandgap narrowed as both the dilution ratio was increased and the addition of atomic hydrogen treatment.[[fileno]]2030170030047[[department]]電機工程學