Study on the Compensation Mechanisms of CuInS2

[[abstract]]Combining the studies of electrical, photoluminescence and chemical compositional analyses, the defect structure and compensation mechanisms of CuInS2 are revealed. The carrier concentrations as a function of temperature determined from experiments and calculations showed reasonable agreements. A defect model was developed to illustrate the compensation effect of CuInS2 crystals, and that is the first `quantitative' investigation on carrier concentration[[fileno]]2030170030028[[department]]電機工程學