The Highly Scalable and Reliable Hafnium Oxide ReRAM and Its Future Challenges

[[abstract]]A novel resistive memory with the TiN/Ti/HfOx/TiN stack is proposed and fully integrated with 0.18 μm CMOS technology. The excellent memory performances such as low operation current (down to 25 μA), low operation voltage (100 M cycles), and reliable data retention (10 years extrapolation at 220°C), good read disturb performance, and excellent program (PGM)/erase(ERS) disturb immunity. A 1 Kb array with robust characteristics was also fabricated successfully. The endurance for all devices can exceed 106 cycles by a pulse width of 40 ns. New verification methods, which give tight distribution for high resistance (RHIGH) and low resistance (RLOW), are proposed to ensure a good operation window. The future challenges for the ReRAM, such as the issue of resistance fluctuation, the lack of a comprehensive resistance switching mechanism, and the need to develop a bi-directional diode for 3D stacked application, are discussed.[[fileno]]2030103030018[[department]]電機工程學