[[abstract]]In this study, the authors propose a new offset tolerant current-sampling-based SA (CSB-SA) to achieve 7x faster read speed than previous SAs for sensing small ICELL. A fabricated 90nm 512Kb OTP macro, using the CSB-SA and our CMOS-logic compatible OTP cell, achieves 26ns macro random access time for reading sub-200nA lCELL. Measurements also confirmed that this 90nm CSB-SA could achieve sub-100nA sensing.[[fileno]]2030142030007[[department]]電機工程學
A full current-mode sense amplifier is presented. It extensively utilizes the cross-c...
Abstract — The sense amplifiers is a main peripheral of CMOS memory and play an important role to ov...
Particle detection circuits are used for a wide range of applications from experimental physics to m...
[[abstract]]In this study, the authors propose a new offset tolerant current-sampling-based SA (CSB-...
Using a current-sensing scheme and novel circuit techniques, the amplifier achieves sensing speeds e...
Using a current-sensing scheme and novel circuit techniques, the amplifier achieves sensing speeds e...
Abstract- A memory sense-amplifier self-calibrates during sense-line precharge to reduce the require...
Static Random Access Memory (SRAM) have been used extensively in the market especially in product su...
abstract: Resistive Random Access Memory (RRAM) is an emerging type of non-volatile memory technolog...
This paper presents a low-offset read sensing scheme for resistive memories. Due to increasing devic...
Phase change memory (PCM) device associated with Ovonic Threshold Switch (OTS) selector is a proven ...
In recent years, medical technology is the very hot research topics as people pursue healthy life st...
2021 IFIP/IEEE 29th International Conference on Very Large Scale Integration (VLSI-SoC), Singapour, ...
A voltage-type sense amplifier for low-power nonvolatile memories is presented against traditional c...
While technology scaling enables increased density for memory cells, the intrinsic high leakage powe...
A full current-mode sense amplifier is presented. It extensively utilizes the cross-c...
Abstract — The sense amplifiers is a main peripheral of CMOS memory and play an important role to ov...
Particle detection circuits are used for a wide range of applications from experimental physics to m...
[[abstract]]In this study, the authors propose a new offset tolerant current-sampling-based SA (CSB-...
Using a current-sensing scheme and novel circuit techniques, the amplifier achieves sensing speeds e...
Using a current-sensing scheme and novel circuit techniques, the amplifier achieves sensing speeds e...
Abstract- A memory sense-amplifier self-calibrates during sense-line precharge to reduce the require...
Static Random Access Memory (SRAM) have been used extensively in the market especially in product su...
abstract: Resistive Random Access Memory (RRAM) is an emerging type of non-volatile memory technolog...
This paper presents a low-offset read sensing scheme for resistive memories. Due to increasing devic...
Phase change memory (PCM) device associated with Ovonic Threshold Switch (OTS) selector is a proven ...
In recent years, medical technology is the very hot research topics as people pursue healthy life st...
2021 IFIP/IEEE 29th International Conference on Very Large Scale Integration (VLSI-SoC), Singapour, ...
A voltage-type sense amplifier for low-power nonvolatile memories is presented against traditional c...
While technology scaling enables increased density for memory cells, the intrinsic high leakage powe...
A full current-mode sense amplifier is presented. It extensively utilizes the cross-c...
Abstract — The sense amplifiers is a main peripheral of CMOS memory and play an important role to ov...
Particle detection circuits are used for a wide range of applications from experimental physics to m...