[[abstract]]A 70-GHz broadband amplifier is realized in a 0.13-mum CMOS technology. By using five cascaded common-source stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB respectively under a power consumption (PDC) of 79.5 mW. With miniaturized transformer design, the core area of the circuit is only ~0.05 mm2. Compared with the state-of-the-art CMOS broadband amplifiers, this work achieves the highest gain-bandwidth product (GBW) of 231 GHz and also the highest GBW/PDC of 2.9 GHz/mW.[[fileno]]2030121030036[[department]]電機工程學
[[abstract]]A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matchi...
A compact and broadband high-gain amplifier has been developed and is presented in this paper. It is...
2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Phoenix, Arizona, USA, 17 - 19 May 2...
[[abstract]]A 70-GHz broadband amplifier is realized in a 0.13- m CMOS technology. By using five cas...
[[abstract]]A 55-71-GHz fully integrated power amplifier (PA) using a distributed active transformer...
A novel broadband transformer-based CMOS power amplifier (PA) design method is studied in this artic...
[[abstract]]A 60-GHz fully-integrated and broadband distributed active transformer (DAT) power ampli...
International audienceA 60 GHz highly linear Power Amplifier (PA) is implemented in 65-nm Low Power ...
The range of radar and communication systems working in the atmospheric window around 140 GHz strong...
This letter describes an ultra-broadband power amplifier (PA) in a 130 nm SiGe:C BiCMOS technology. ...
This work reports a multi-purpose highly linear ultra-wideband amplifier with a gain bandwidth produ...
A transformer-based high-order output matching network is proposed for broadband power amplifier des...
A 60 GHz power amplifier with 20 dB small signal gain is designed and fabricated using standard 1P7M...
[[abstract]]A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From th...
This paper presents an E-band (60 - 90 GHz) balanced driver amplifier in a 50nm InGaAs-based metamor...
[[abstract]]A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matchi...
A compact and broadband high-gain amplifier has been developed and is presented in this paper. It is...
2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Phoenix, Arizona, USA, 17 - 19 May 2...
[[abstract]]A 70-GHz broadband amplifier is realized in a 0.13- m CMOS technology. By using five cas...
[[abstract]]A 55-71-GHz fully integrated power amplifier (PA) using a distributed active transformer...
A novel broadband transformer-based CMOS power amplifier (PA) design method is studied in this artic...
[[abstract]]A 60-GHz fully-integrated and broadband distributed active transformer (DAT) power ampli...
International audienceA 60 GHz highly linear Power Amplifier (PA) is implemented in 65-nm Low Power ...
The range of radar and communication systems working in the atmospheric window around 140 GHz strong...
This letter describes an ultra-broadband power amplifier (PA) in a 130 nm SiGe:C BiCMOS technology. ...
This work reports a multi-purpose highly linear ultra-wideband amplifier with a gain bandwidth produ...
A transformer-based high-order output matching network is proposed for broadband power amplifier des...
A 60 GHz power amplifier with 20 dB small signal gain is designed and fabricated using standard 1P7M...
[[abstract]]A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From th...
This paper presents an E-band (60 - 90 GHz) balanced driver amplifier in a 50nm InGaAs-based metamor...
[[abstract]]A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matchi...
A compact and broadband high-gain amplifier has been developed and is presented in this paper. It is...
2015 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Phoenix, Arizona, USA, 17 - 19 May 2...