Quantum effect in oxide thickness determination from capacitance measurement

[[abstract]]Simple quantitative models of charge displacement due to the quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (TDC) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and TDC can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models[[fileno]]2030158030007[[department]]電機工程學