[[abstract]]In this paper, we will study floorplanning in 3-D integrated circuits (3D-ICs). Although literature is abundant on 3D-IC floorplanning, none of them consider the areas and positions of signal through-silicon vias (TSVs). In previous research, signal TSVs are viewed as points during the floorplanning stage. Ignoring the areas, positions and connections of signal TSVs, previous research estimates wirelength by measuring the half-perimeter wirelength of pins in a net only. Experimental results reveal that 29.7% of nets possess signal TSVs that cannot be put into the white space within the bounding boxes of pins. Moreover, the total wirelength is underestimated by 26.8% without considering the positions of signal TSVs. The considera...
Dramatic improvements in circuit integration technologies have resulted in a huge increase in the co...
Three-dimensional integrated circuits (3-D IC) are available through the die-stacking and through-si...
We analyze the impact of through-silicon vias (TSVs) downsizing and future CMOS nanotechnology scali...
[[abstract]]In this paper, we will study fixed-outline floorplanning in 3D-IC. Although there is abu...
We propose a novel floorplanning algorithm for 3D ICs with through-silicon vias (TSVs) that directly...
Through-silicon via (TSV)-based three-dimensional integrated circuits (3D ICs) are expected to be th...
We propose a new scheme of dynamic nets-to-TSVs assignment during floorplanning for 3D-ICs. A nontri...
Through-Silicon-Via (TSV) is the enabling technology for the fine-grained 3D integration of multiple...
Through silicon via (TSV) based 3D integrated circuits have inspired a novel design paradigm which e...
Three-dimensional (3D) integrated circuits, which use a vertically stacked design of 2D planar chips...
Individual dies in 3D integrated circuits are connected using through-silicon-vias (TSVs). TSVs not ...
Abstract — In 3D integrated circuits through silicon vias (TSVs) are used to connect different dies ...
Abstract — In a 3D stacked IC, through-silicon vias (TSVs) are utilized to interconnect dies vertica...
A very important challenge in designing through-silicon via (TSV)-based 3D ICs is to accurately esti...
We present a new scheme of buffer implementation in through-silicon via (TSV) based 3D circuits at e...
Dramatic improvements in circuit integration technologies have resulted in a huge increase in the co...
Three-dimensional integrated circuits (3-D IC) are available through the die-stacking and through-si...
We analyze the impact of through-silicon vias (TSVs) downsizing and future CMOS nanotechnology scali...
[[abstract]]In this paper, we will study fixed-outline floorplanning in 3D-IC. Although there is abu...
We propose a novel floorplanning algorithm for 3D ICs with through-silicon vias (TSVs) that directly...
Through-silicon via (TSV)-based three-dimensional integrated circuits (3D ICs) are expected to be th...
We propose a new scheme of dynamic nets-to-TSVs assignment during floorplanning for 3D-ICs. A nontri...
Through-Silicon-Via (TSV) is the enabling technology for the fine-grained 3D integration of multiple...
Through silicon via (TSV) based 3D integrated circuits have inspired a novel design paradigm which e...
Three-dimensional (3D) integrated circuits, which use a vertically stacked design of 2D planar chips...
Individual dies in 3D integrated circuits are connected using through-silicon-vias (TSVs). TSVs not ...
Abstract — In 3D integrated circuits through silicon vias (TSVs) are used to connect different dies ...
Abstract — In a 3D stacked IC, through-silicon vias (TSVs) are utilized to interconnect dies vertica...
A very important challenge in designing through-silicon via (TSV)-based 3D ICs is to accurately esti...
We present a new scheme of buffer implementation in through-silicon via (TSV) based 3D circuits at e...
Dramatic improvements in circuit integration technologies have resulted in a huge increase in the co...
Three-dimensional integrated circuits (3-D IC) are available through the die-stacking and through-si...
We analyze the impact of through-silicon vias (TSVs) downsizing and future CMOS nanotechnology scali...