[[abstract]]The critical epilayer thickness for the formation of misfit dislocations at the interface between an epilayer and a substrate with a finite thickness is derived in the present study. The analysis is based on the energy approach, in which the self-energy of dislocation, the interaction energy between the dislocation and free surfaces, and the lattice mismatch energy of substrate and epilayer are calculated. To satisfy the free surface condition, the methodology of superposition principle and Fourier transformation are used in analyzing the stress field due to the interface dislocation. The critical epilayer thickness is compared with those reported in the literature.[[fileno]]2020330010097[[department]]材料科學工程學
The role of the free surface in determining the equilibrium position of misfit dislocations in thin ...
In a thin film system involving dissimilar materials, the residual stresses and microstructural defe...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
[[abstract]]The system of an epitaxial film on a semi-infinite substrate of a different material is ...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...
[[abstract]]The effect of substrate modulus difference on dislocation formation in an epitaxial film...
The present work studies the critical thickness of an epilayer on a substrate with a finite or infin...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...
The continuum theory of elastic dislocations is applied to estimate the critical thickness of a stra...
The critical thickness of an epilayer on a compliant substrate with the semiconductor-on-insulator c...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...
Crystalline films grown epitaxially on substrate consisting of different crystalline material are of...
Interfaces between dissimilar materials and within polycrystalline materials are ubiquitous in moder...
Elastic constants of an epilayer usually differ from that of its substrate. The effect of this diffe...
The role of the free surface in determining the equilibrium position of misfit dislocations in thin ...
In a thin film system involving dissimilar materials, the residual stresses and microstructural defe...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
[[abstract]]The system of an epitaxial film on a semi-infinite substrate of a different material is ...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...
[[abstract]]The effect of substrate modulus difference on dislocation formation in an epitaxial film...
The present work studies the critical thickness of an epilayer on a substrate with a finite or infin...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...
The continuum theory of elastic dislocations is applied to estimate the critical thickness of a stra...
The critical thickness of an epilayer on a compliant substrate with the semiconductor-on-insulator c...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...
Crystalline films grown epitaxially on substrate consisting of different crystalline material are of...
Interfaces between dissimilar materials and within polycrystalline materials are ubiquitous in moder...
Elastic constants of an epilayer usually differ from that of its substrate. The effect of this diffe...
The role of the free surface in determining the equilibrium position of misfit dislocations in thin ...
In a thin film system involving dissimilar materials, the residual stresses and microstructural defe...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...