Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure

[[abstract]]A stable pinned structure for a magnetoresistive sensor includes a pair of ferromagnetic layers sandwiched about an antiferromagnetic layer, the ferromagnetic layers having substantially opposite magnetic directions magnetostatically coupled and pinned by the antiferromagnetic layer. A free layer of ferromagnetic material has a magnetic direction that can rotate in the presence of an applied magnetic field so that the field can be sensed. A second free layer may be provided, such that the free layers are sandwiched about the pinned structure, with the sensor configured for amplifying signals and minimizing common mode noise.[[fileno]]2020314060006[[department]]材料科學工程學