[[abstract]]A method of fabricating a shallow trench isolation structure is described. A preserve layer is formed on a substrate. A trench is formed in the substrate and the preserve layer. An oxide layer is formed over the substrate to fill the trench. A wet densification step is performed in a moist environment. A planarization step is performed until the preserve layer is exposed. A shallow trench isolation structure is formed.[[fileno]]2020309060027[[department]]材料科學工程學
The STI (« Shallow Trench Isolation ») process is communly used in microelectronic to isolate electr...
A trench isolation technology employs trenches refilled with dielectric material to create, in a sin...
[[abstract]]A method of forming a dual damascene structure comprises the steps of providing a substr...
[[abstract]]A method for fabricating a shallow trench isolation. A pad oxide layer and a mask layer ...
[[abstract]]A method for fabricating, a shallow trench isolation structure. A pad oxide layer and a ...
[[abstract]]A method for forming shallow trench isolation is disclosed. The method includes forming ...
[[abstract]]A semiconductor fabrication method is provided for fabricating a shallow-trench isolatio...
[[abstract]]A method for fabricating a semiconductor device. A shallow trench isolation is formed by...
[[abstract]]A semiconductor fabrication method is provided for fabricating a shallow-trench isolatio...
This paper presents a shallow trench isolation technique using plasma etching, LPCVD oxide fill, and...
In this project, the realization of a trenched SOI substrate is carried out, and the characterizatio...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced LOCO...
To prevent the filtration of groundwater into the used underground structure in operation through it...
Shallow Trench Isolation (STI) holds many advantages to that of its predecessor isolation technology...
Réalisées au début du processus de fabrication des circuits intégrés, les tranchées d'isolation perm...
The STI (« Shallow Trench Isolation ») process is communly used in microelectronic to isolate electr...
A trench isolation technology employs trenches refilled with dielectric material to create, in a sin...
[[abstract]]A method of forming a dual damascene structure comprises the steps of providing a substr...
[[abstract]]A method for fabricating a shallow trench isolation. A pad oxide layer and a mask layer ...
[[abstract]]A method for fabricating, a shallow trench isolation structure. A pad oxide layer and a ...
[[abstract]]A method for forming shallow trench isolation is disclosed. The method includes forming ...
[[abstract]]A semiconductor fabrication method is provided for fabricating a shallow-trench isolatio...
[[abstract]]A method for fabricating a semiconductor device. A shallow trench isolation is formed by...
[[abstract]]A semiconductor fabrication method is provided for fabricating a shallow-trench isolatio...
This paper presents a shallow trench isolation technique using plasma etching, LPCVD oxide fill, and...
In this project, the realization of a trenched SOI substrate is carried out, and the characterizatio...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced LOCO...
To prevent the filtration of groundwater into the used underground structure in operation through it...
Shallow Trench Isolation (STI) holds many advantages to that of its predecessor isolation technology...
Réalisées au début du processus de fabrication des circuits intégrés, les tranchées d'isolation perm...
The STI (« Shallow Trench Isolation ») process is communly used in microelectronic to isolate electr...
A trench isolation technology employs trenches refilled with dielectric material to create, in a sin...
[[abstract]]A method of forming a dual damascene structure comprises the steps of providing a substr...