Method for fabricating shallow trench isolation structure

[[abstract]]A method for fabricating, a shallow trench isolation structure. A pad oxide layer and a silicon nitride layer are formed in sequence on a substrate. A trench is formed in the substrate and a liner oxide layer is formed on a sidewall of the trench. A doped silicon dioxide layer is formed on the silicon nitride layer and fills the trench. An annealing process is performed to density the doped silicon dioxide layer. A portion of the doped silicon dioxide layer is removed to expose the silicon nitride layer by a planarization process.[[fileno]]2020309060018[[department]]材料科學工程學