[[abstract]]A method of forming an inter-metal interconnection is provided. A substrate is provided. A dielectric layer with a metal plug therein is formed on the substrate. An IMD layer is formed on the dielectric layer. An insulating layer and a PE-oxide layer are formed on the IMD layer. A photolithography and etching process is performed to form a trench in the IMD layer and to expose the metal plug in the dielectric layer. A metal is filled into the trench to electrically connect to the metal plug.[[fileno]]2020309060016[[department]]材料科學工程學
[[abstract]] A method for forming borderless contact is disclosed. The method includes providing a ...
Describes an electrical interconnection medium having first and second overlying interconnection lay...
[[abstract]]A fabrication method for an integrated device having a capacitor in an interconnect syst...
[[abstract]]A method of manufacturing copper interconnects includes the steps of first providing a s...
[[abstract]]A method of fabricating an unlanded metal via of multi-level interconnection. The method...
[[abstract]]A dielectric layer in a dual-damascene interconnect is described. A dual-damascene inter...
Forming an interconnect of a semiconductor device includes defining a recessed structure proximate t...
Production of an insulation layer, functioning as an inter-metal dielectric (IMD), involves: (a) cov...
[[abstract]]A method of forming a bonding pad is provided. A substrate is provided and a multi-metal...
[[abstract]]A dual damascene process forms a two level metal interconnect structure by first providi...
A method for producing an interconnect from a first metal trace, through a dielectric, to a second m...
[[abstract]]A method for forming dual damascene is provided. First, a first inter-metal dielectric l...
The invention provides a method for forming an interconnect structures and the interconnect structur...
DE1004015017 A UPAB: 20051125 NOVELTY - Forming a mechanical and electrical connection between two s...
[[abstract]]A multilevel interconnect structure is formed in a manner that reduces the problems asso...
[[abstract]] A method for forming borderless contact is disclosed. The method includes providing a ...
Describes an electrical interconnection medium having first and second overlying interconnection lay...
[[abstract]]A fabrication method for an integrated device having a capacitor in an interconnect syst...
[[abstract]]A method of manufacturing copper interconnects includes the steps of first providing a s...
[[abstract]]A method of fabricating an unlanded metal via of multi-level interconnection. The method...
[[abstract]]A dielectric layer in a dual-damascene interconnect is described. A dual-damascene inter...
Forming an interconnect of a semiconductor device includes defining a recessed structure proximate t...
Production of an insulation layer, functioning as an inter-metal dielectric (IMD), involves: (a) cov...
[[abstract]]A method of forming a bonding pad is provided. A substrate is provided and a multi-metal...
[[abstract]]A dual damascene process forms a two level metal interconnect structure by first providi...
A method for producing an interconnect from a first metal trace, through a dielectric, to a second m...
[[abstract]]A method for forming dual damascene is provided. First, a first inter-metal dielectric l...
The invention provides a method for forming an interconnect structures and the interconnect structur...
DE1004015017 A UPAB: 20051125 NOVELTY - Forming a mechanical and electrical connection between two s...
[[abstract]]A multilevel interconnect structure is formed in a manner that reduces the problems asso...
[[abstract]] A method for forming borderless contact is disclosed. The method includes providing a ...
Describes an electrical interconnection medium having first and second overlying interconnection lay...
[[abstract]]A fabrication method for an integrated device having a capacitor in an interconnect syst...