Fabrication method of a dielectric layer for a DRAM capacitor MANUFACTURE OF DRAM CAPACITOR DIELECTRIC FILM

[[abstract]]PROBLEM TO BE SOLVED: To manufacture a DRAM capacitor dielectric film having superior dielectric constant. SOLUTION: After a ditantalum pentoxide dielectric film 104 is deposited on a surface of a polysilicon accumulating electrode 102, is the ditantalum pentoxide dielectric film is subjected to two-stage process, and first a remote oxygen plasma process or an UV-ray ozone process is carried out, and next a spike annealing process is carried out. Thus, when the ditantalum pentoxide dielectric film is subjected to two-stage process, the first stage remote oxygen plasma is emitted at relatively lower temperature, and also as the required time of a second stage spike annealing process is extremely short, a thermal history of a manufacture process of a dielectric film can be reduced.[[fileno]]2020309060006[[department]]材料科學工程學