Article comprising an oxide layer on a GaAs-based semiconductor body

[[abstract]]Disclosed are articles that comprise an oxide layer on a GaAs-based semiconductor body, with metal layers on the oxide and the body facilitating application of an electric field across the oxide layer. The interface between the oxide and the semiconductor body is of device quality. Contrary to teachings of the prior art, the oxide is not essentially pure Ga.sub.2 O.sub.3, but instead has composition Ga.sub.x A.sub.y O.sub.z, where A is an electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state. Furthermore, x.gtoreq.0, z is selected to satisfy the requirement that both Ga and A is substantially fully oxidized and y/(x+y) is greater than 0.1. Stabilizer element A typically is selected from Sc, Y, the rare earth elements and the alkaline earth elements. Articles according to the invention exemplarily comprise a planar enchancement mode MOS-FET with inversion channel. A method of making articles as described above is also disclosed.[[fileno]]2020317060013[[department]]材料科學工程學