Deposition of iridium thin films using new (IrCVD)-C-I precursors

[[abstract]]The syntheses of three volatile Ir-1 cyclooctadiene precursors is described. The anionic ligand was carefully selected to produce a structure (see Figure) with physical properties suitable for CVD requirements. Films grown using oxygen as carrier gas produced iridium thin films with a purity higher than 98 % and a measured resistivity in the range of 8.4 to 10.2 muOmega cm.[[fileno]]2010302010008[[department]]化學