Enhancement-Mode p-channel GaAs MOSFETs on Semi-insulating Substrates

[[abstract]]We report on the first demonstration of an enhancement-mode p-channel GaAs metal oxide field effect transistor (MOSFET) realized directly on GaAs semi-insulating substrate with a fully ion-implant technology. The device, with a 40×50 μm2 gate geometry, shows very good DC characteristics with transconductance of 0.3 mS/mm and an excellent gate breakdown field greater then 3 MV/cm[[fileno]]2010113030002[[department]]物理