Effects of proton irradiation on electrical and optical properties of n-InN

[[abstract]]Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.[[fileno]]2010109010087[[department]]物理