[[abstract]]In situ scanning tunneling microscopy and time-resolved reflection high-energy electron diffraction measurements were performed to study the nitridation process of the As-terminated GaAs(001)-(2x4) surface by using electron cyclotron resonance plasma-assisted molecular-beam epitaxy. We report the real-space atomic structure of the coherently strained (3x3)-ordered GaN monolayer on GaAs(001) after a limited-exposure nitridation process and the atomically smooth morphology of this nitrided surface. The unique (3x3) phase is found consisting of nitrogen dimers and a regular array of missing nitrogen rows in both [] and [110] directions.[[fileno]]2010109010015[[department]]物理
High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on...
In[sub y]Ga[sub 1-y]As[sub1-x]N[sub x] containing a small amount of nitrogen (x<0.05) is a new narro...
International audienceGaAs(001) substrates nitrided with N 2 plasma at various temperatures were inv...
The nitridation of the GaAs(001) surface using a radio frequency atomic nitrogen plasma source in a ...
The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) sur...
A set of delta-GaNyAs1–y/GaAs strained-layer superlattices grown on GaAs (001) substrates by electro...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
Nitridation of GaAs(001) was performed using a radio frequency nitrogen plasma source in a molecular...
The composition, surface structure, and electronic structure of zinc blende–GaN films grown on GaAs ...
This study demonstrates the formation of two-dimensional GaN on GaAs (001) surface by bombardment of...
The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean GaAs(001) surf...
A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) s...
We have investigated nitrogen incorporation mechanisms in dilute nitride GaAsNGaAsN alloys grown by ...
High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on...
In[sub y]Ga[sub 1-y]As[sub1-x]N[sub x] containing a small amount of nitrogen (x<0.05) is a new narro...
International audienceGaAs(001) substrates nitrided with N 2 plasma at various temperatures were inv...
The nitridation of the GaAs(001) surface using a radio frequency atomic nitrogen plasma source in a ...
The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) sur...
A set of delta-GaNyAs1–y/GaAs strained-layer superlattices grown on GaAs (001) substrates by electro...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
Nitridation of GaAs(001) was performed using a radio frequency nitrogen plasma source in a molecular...
The composition, surface structure, and electronic structure of zinc blende–GaN films grown on GaAs ...
This study demonstrates the formation of two-dimensional GaN on GaAs (001) surface by bombardment of...
The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean GaAs(001) surf...
A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) s...
We have investigated nitrogen incorporation mechanisms in dilute nitride GaAsNGaAsN alloys grown by ...
High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on...
In[sub y]Ga[sub 1-y]As[sub1-x]N[sub x] containing a small amount of nitrogen (x<0.05) is a new narro...
International audienceGaAs(001) substrates nitrided with N 2 plasma at various temperatures were inv...