Structural and doping properties of molecular beam epitaxy-grown Si-doped GaAs(001) surfaces

[[abstract]]Scanning funneling microscopy was used to study surface structures and doping properties of molecular beam epitaxy (MBE)-grown Si-doped. GaAs(001)-(2 x 4) and GaAs(001)-c(4 x 4) surfaces on the atomic scale. It was found that on the Si-doped (2 x 4) surface, arsenic dimers formed severer energetically different configurations besides the most stable two-dimer configuration. The doping properties of the c(4 x 4) surface vr ere found to be significantly different from the (2 x 4) case. The Si dopants tended to segregate on top of the c(4 x 4) surface and formed small asymmetric clusters oriented along the [110] direction.[[fileno]]2010109010012[[department]]物理