[[abstract]]The Schottky barrier height φm of amorphous MIS solar cells depends greatly on the density of surface states Ds, and on the density of localized states near the Fermi level. At low density of gap states, the φm is maximum for Ds being around 1018 m−2 eV−1. With an illumination of light, the barrier height decreases as the collection of minority carriers near the interface increases.[[fileno]]2010122010026[[department]]物理
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconducto...
The open-circuit voltage, Voc developed across a Schottky-barrier (SB) solar cell has been modeled a...
Abstract- Amorphous silicon/alloy superlattices provide advantages in solar cell design, such as (a)...
The theory of Schottky barrier solar cells has been investigated and the following contributions hav...
[[abstract]]In this comprehensive study, several interesting results which are different from those ...
The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically followi...
The photovoltage produced by a Schottky barrier photocell shows a strong temperature dependence if ...
Abstract- Schottky-barrier solar cells have been studied previously by various research workers. In ...
In the present paper, we discuss a generalized theory of electrical characteristics for amorphous se...
Several models were developed for the analysis of metal-semiconductor solar cells. The models presen...
The performance of back-illuminated MIS Schottky barrier solar cells is investigated theoretically. ...
The profile of the energy bands of a semiconductor in contact with a metal is determined by the inte...
International audienceWe report on first-principles calculations of the properties of the MoSe2/Mo(1...
Please read abstract in the article.The Midlands State University research board and the University ...
Schottky barriers on N-type cadmium telluride have been studied in view of application to solar cell...
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconducto...
The open-circuit voltage, Voc developed across a Schottky-barrier (SB) solar cell has been modeled a...
Abstract- Amorphous silicon/alloy superlattices provide advantages in solar cell design, such as (a)...
The theory of Schottky barrier solar cells has been investigated and the following contributions hav...
[[abstract]]In this comprehensive study, several interesting results which are different from those ...
The performance of Au-p-n-Si Schottky barrier solar cell has been investigated theoretically followi...
The photovoltage produced by a Schottky barrier photocell shows a strong temperature dependence if ...
Abstract- Schottky-barrier solar cells have been studied previously by various research workers. In ...
In the present paper, we discuss a generalized theory of electrical characteristics for amorphous se...
Several models were developed for the analysis of metal-semiconductor solar cells. The models presen...
The performance of back-illuminated MIS Schottky barrier solar cells is investigated theoretically. ...
The profile of the energy bands of a semiconductor in contact with a metal is determined by the inte...
International audienceWe report on first-principles calculations of the properties of the MoSe2/Mo(1...
Please read abstract in the article.The Midlands State University research board and the University ...
Schottky barriers on N-type cadmium telluride have been studied in view of application to solar cell...
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconducto...
The open-circuit voltage, Voc developed across a Schottky-barrier (SB) solar cell has been modeled a...
Abstract- Amorphous silicon/alloy superlattices provide advantages in solar cell design, such as (a)...