DOIAbstract
[[abstract]]SEM, TEM and optical metallography have been applied to investigate the microstructural changes of the BF2+-implanted silicon annealed by the intense irradiation of a flash tube. Slip traces and electron diffraction patterns as revealed on the annealed wafers clearly indicate epitaxial regrowth from liquid to solid phase after flash annealing with energy density higher than 20 J/cm2. A strong-diffusion model has been used to solve the one-dimensional heat conduction of the flash irradiation on the semiconductor. The calculated threshold energy for the temperature of the surface to reach the melting point agrees well with experimental values.[[fileno]]2010122010024[[department]]物理
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