[[abstract]]Reaction of thin titanium films on silicon has been observed in forming polyphase silicides by flash irradiations with full width at half-maximum of 100 ms. Ion back scattering and optical micrographic studies show that the metallization occurs only when the temperature of the metal surface reaches the melting point. The experimental threshold irradiation energy density for the metal surface to reach the melting point is 17.6 J/cm2, which is close to the theoretical value of 20.4 J/cm2, based on the strong-thermal-diffusion-limit approach.[[fileno]]2010122010018[[department]]物理
The present research is motivated by the remarkable mechanical, thermal and electronic properties of...
Abstract. Layer-by-layer growth of silicon nitride by NH, and SiH, was investigated using an ultracl...
Localized deposits of silicon nitride, which are stable to at least 5000 C, have been formed by a ne...
The physical properties including the mechanical, optical and electrical properties of Ti nitrides a...
International audienceSilicides and nitrides of transition metals are expected to play a great role ...
Owing to the reducing effect of NHx radicals and H species produced in (Ar-N2-H2) expanding plasma, ...
International audienceThe diffusion of nitrogen into Ti silicide films allows the performance of com...
This research investigated the effects of the ion beam assisted deposition process on the interdiffu...
A multilayer metallization based upon an alloy of Titanium and Tungsten (30:70 atomic %), has been d...
Titanium silicon nitride (Ti–Si–N) has emerged as a strong candidate for next generation diffusion b...
A detailed investigation of the growth mechanism of ultra-thin silicon nitride (Si3N4) films on Si(1...
Pulsed laser deposition (PLD) technique was demonstrated for the deposition of titanium nitride (TiN...
The paper shows the advantage of silicon nitride for use as a light-emitting element in integrated c...
We have studied the dynamics of the initial stages of silicon nitride formation on siliconsurfaces u...
Philosophiae Doctor - PhDNanocrystalline silicon (nc-Si:H) is an interesting type of silicon with su...
The present research is motivated by the remarkable mechanical, thermal and electronic properties of...
Abstract. Layer-by-layer growth of silicon nitride by NH, and SiH, was investigated using an ultracl...
Localized deposits of silicon nitride, which are stable to at least 5000 C, have been formed by a ne...
The physical properties including the mechanical, optical and electrical properties of Ti nitrides a...
International audienceSilicides and nitrides of transition metals are expected to play a great role ...
Owing to the reducing effect of NHx radicals and H species produced in (Ar-N2-H2) expanding plasma, ...
International audienceThe diffusion of nitrogen into Ti silicide films allows the performance of com...
This research investigated the effects of the ion beam assisted deposition process on the interdiffu...
A multilayer metallization based upon an alloy of Titanium and Tungsten (30:70 atomic %), has been d...
Titanium silicon nitride (Ti–Si–N) has emerged as a strong candidate for next generation diffusion b...
A detailed investigation of the growth mechanism of ultra-thin silicon nitride (Si3N4) films on Si(1...
Pulsed laser deposition (PLD) technique was demonstrated for the deposition of titanium nitride (TiN...
The paper shows the advantage of silicon nitride for use as a light-emitting element in integrated c...
We have studied the dynamics of the initial stages of silicon nitride formation on siliconsurfaces u...
Philosophiae Doctor - PhDNanocrystalline silicon (nc-Si:H) is an interesting type of silicon with su...
The present research is motivated by the remarkable mechanical, thermal and electronic properties of...
Abstract. Layer-by-layer growth of silicon nitride by NH, and SiH, was investigated using an ultracl...
Localized deposits of silicon nitride, which are stable to at least 5000 C, have been formed by a ne...