Depth profiling of implanted neon with resonant nuclear reactions

[[abstract]]A resonance in the 20Ne(p,γ)21Na reaction at a proton energy of 1169 keV has been investigated for its usefulness in quantitatively determining neon concentration as a function of depth in a solid substrate. Depth profiles of neon implanted in tantalum and silicon have been obtained by measuring prompt γ-ray yields with both NaI(T1) detectors and large volume Ge(Li) detectors. Neon profiles were also obtained by measuring the delayed 21Na positron activity. The efficacy of the various measurement techniques is discussed. The method seems sufficiently sensitive that neon concentrations of 1020/cm3 are measurable in favourable host materials. Additional alternative nuclear techniques for profiling neon are suggested.[[fileno]]2010125010022[[department]]物理