THE EFFECT OF ANNEALING TEMPERATURE ON ELECTRICAL-PROPERTIES OF PD/N-GASB SCHOTTKY CONTACTS

[[abstract]]Thermal stability for Pd/n‐GaSb Schottky contacts is analyzed and studied. At room temperature, Pd/n‐GaSb Schottky diodes have better performance, but when the annealing temperature is increased to 300 and 450 °C for 30 min, Schottky contacts gradually become ohmic contacts. From the measurement of Rutherford backscattering spectroscopy and x‐ray diffraction analysis, the result indicates that the interdiffusion between palladium and gallium forming Ga5Pd is the dominant factor for degrading properties of Schottky diodes.[[fileno]]2010125010004[[department]]物理