[[abstract]]In the present study, several under bump metallization (UBM) schemes using either electroplated Ni or electroless Ni (EN) as the solderable layer are investigated. The EN and electroplated Ni are first deposited on Cu/Al2O3 substrates, followed by electroplating of thin gold coatings. Joints of 42Sn-58Bi/Au/EN/Cu/Al2O3 and 42Sn-58Bi/Au/Ni/Cu/Al2O3 are annealed at 145 C and 185CC for 30–180 minutes to investigate the interfacial reaction between the solder and metallized substrates. For 42Sn-58Bi/Au/Ni-5.5wt.%P/Cu/Al2O3, 42Sn-58Bi/Au/Ni-12.1wt.%P/Cu/Al2O3, and 42Sn-58Bi/Au/Ni/CU/Al2O3 joints annealed at 145 C, only Ni3Sn4 intermetallic compound (IMC) formed at the solder/EN interace. When annealed at an elevated temperature of 18...
[[abstract]]Ni/Cu under-bump metallization (UBM) for flip-chip application is widely used in electro...
[[abstract]]Flip-chip technology with the layout of ball grid array has been widely used in today’s ...
The voids formed in the Ni3P layer during reaction between Sn-based solders and electroless Ni–P met...
[[abstract]]The Ni-based under-bump metallurgies (UBMs) are of interest because they have a slower r...
[[abstract]]Electroless Ni-P (EN) has been popularly adopted and used as a diffusion barrier in the ...
[[abstract]]Ni-based under-bump metallization (UBM) for flip-chip application is widely used in toda...
[[abstract]]Nickel-based under-bump metallization (UBM) has been widely used in flip-chip technology...
Solid-state interfacial reactions between Sn–3.5Ag solder and electroless Ni–P metallization on Cu s...
Solid-state interfacial reactions between Sn–3.5Ag solder and electroless Ni–P metallization on Cu s...
[[abstract]]Flip-chip interconnection technology plays a key role in today’s electronics packaging. ...
Electroless Ni–P with a thin layer of immersion gold has been considered as a promising under bump m...
This work focuses on the interfacial reaction between Sn-bearing solders (lead-free Sn-3.5Ag and eut...
A comparative study of solid/solid interfacial reactions of electroless Ni-P (15at.%P) with lead-fre...
[[abstract]]The growth mechanism of intermetallics between solders and metallized substrates, after ...
Abstract The interface between the solder and the under-bump metallization (UBM) affect the reliabil...
[[abstract]]Ni/Cu under-bump metallization (UBM) for flip-chip application is widely used in electro...
[[abstract]]Flip-chip technology with the layout of ball grid array has been widely used in today’s ...
The voids formed in the Ni3P layer during reaction between Sn-based solders and electroless Ni–P met...
[[abstract]]The Ni-based under-bump metallurgies (UBMs) are of interest because they have a slower r...
[[abstract]]Electroless Ni-P (EN) has been popularly adopted and used as a diffusion barrier in the ...
[[abstract]]Ni-based under-bump metallization (UBM) for flip-chip application is widely used in toda...
[[abstract]]Nickel-based under-bump metallization (UBM) has been widely used in flip-chip technology...
Solid-state interfacial reactions between Sn–3.5Ag solder and electroless Ni–P metallization on Cu s...
Solid-state interfacial reactions between Sn–3.5Ag solder and electroless Ni–P metallization on Cu s...
[[abstract]]Flip-chip interconnection technology plays a key role in today’s electronics packaging. ...
Electroless Ni–P with a thin layer of immersion gold has been considered as a promising under bump m...
This work focuses on the interfacial reaction between Sn-bearing solders (lead-free Sn-3.5Ag and eut...
A comparative study of solid/solid interfacial reactions of electroless Ni-P (15at.%P) with lead-fre...
[[abstract]]The growth mechanism of intermetallics between solders and metallized substrates, after ...
Abstract The interface between the solder and the under-bump metallization (UBM) affect the reliabil...
[[abstract]]Ni/Cu under-bump metallization (UBM) for flip-chip application is widely used in electro...
[[abstract]]Flip-chip technology with the layout of ball grid array has been widely used in today’s ...
The voids formed in the Ni3P layer during reaction between Sn-based solders and electroless Ni–P met...