Direct current field adjustable ferroelectric behaviour in (Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric thin films

[[abstract]](Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric (AFE) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol–gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE–FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. The AFE–FE phase transformation temperature can be adjusted as a function of the DC bias field and the thickness of the thin film. With increasing DC bias field, the FE phase region was enlarged, the AFE–FE transformation temperature shifted to lower temperature, and the ferroelectric-to-paraelectric transformation temperature shifted to higher temperature. With increasing film thickness, the modulation effect of the DC bias field on the AFE–FE phase transformation temperature is increased.[[fileno]]2020326010091[[department]]材料科學工程學