[[abstract]]Thin films of Pb(Zr,Ti)O-3 (PZT) were rf-magnetron sputtered on both (100)-textured LaNiO3 electrode and Pt electrode. In the presence of the (100)-textured LaNiO3 electrode, a pure perovskite phase of (100) preferred orientation could be obtained at substrate temperatures as low as 450 degreesC. In contrast, the residual pyrochlore phase was present in films deposited on the Pt electrode. In addition to lowering the fabricating temperature, the LaNiO3 electrode increases the relative dielectric constant and markedly decreases the coercive field of PZT films. Most beneficially, the LaNiO3 electrode not only improves the fatigue resistance but also reduces the leakage current of PZT films.[[fileno]]2020301010099[[department]]材料
Thin films of ferroelectric $PbTiO_3$ (PT) and $Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZT) as well as antiferroe...
Thin films of ferroelectric PbTiO3 (PT) and Pb(Zr0.5Ti0.5)O3 (PZT) as well as antiferroelectric PbZr...
(100)-oriented LaNiO3 (LNO) thin films were grown on Si substrates by a sol-gel method followed by a...
[[abstract]]Sol-gel-derived thin films of Pb(Zr0.53Ti0.47)O-3 (PZT) were spin-coated onto the (100)-...
[[abstract]]Highly (100)-oriented thin films of PbTiO3 were prepared on (100)-textured LNO/Pt/Ti/SiO...
[[abstract]]By changing the electrode combination of Pt and LaNiO3 (LNO), four capacitor types of Pt...
[[abstract]]BaPbO3 (BPO) films were prepared by rf-magnetron sputtering at temperatures as low as 35...
[[abstract]]The leakage current and the fatigue properties of Pb(Zr, Ti)O3 (PZT) films prepared by r...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a bottom electrode for the deposition of 50-n...
[[abstract]]Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as...
[[abstract]]Characteristics of LaNiO3 (LNO) thin films deposited by rf sputtering process were compa...
[[abstract]]Reducing-atmosphere treatment at 400 degreesC for 10 min was performed on sol-gel-derive...
Ferroelectric multilayer films attract great attention for a wide variation of applications. The syn...
La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO) thin films have been deposited using RF magnetron sputter-de...
Thin films of ferroelectric $PbTiO_3$ (PT) and $Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZT) as well as antiferroe...
Thin films of ferroelectric $PbTiO_3$ (PT) and $Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZT) as well as antiferroe...
Thin films of ferroelectric PbTiO3 (PT) and Pb(Zr0.5Ti0.5)O3 (PZT) as well as antiferroelectric PbZr...
(100)-oriented LaNiO3 (LNO) thin films were grown on Si substrates by a sol-gel method followed by a...
[[abstract]]Sol-gel-derived thin films of Pb(Zr0.53Ti0.47)O-3 (PZT) were spin-coated onto the (100)-...
[[abstract]]Highly (100)-oriented thin films of PbTiO3 were prepared on (100)-textured LNO/Pt/Ti/SiO...
[[abstract]]By changing the electrode combination of Pt and LaNiO3 (LNO), four capacitor types of Pt...
[[abstract]]BaPbO3 (BPO) films were prepared by rf-magnetron sputtering at temperatures as low as 35...
[[abstract]]The leakage current and the fatigue properties of Pb(Zr, Ti)O3 (PZT) films prepared by r...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a bottom electrode for the deposition of 50-n...
[[abstract]]Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as...
[[abstract]]Characteristics of LaNiO3 (LNO) thin films deposited by rf sputtering process were compa...
[[abstract]]Reducing-atmosphere treatment at 400 degreesC for 10 min was performed on sol-gel-derive...
Ferroelectric multilayer films attract great attention for a wide variation of applications. The syn...
La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO) thin films have been deposited using RF magnetron sputter-de...
Thin films of ferroelectric $PbTiO_3$ (PT) and $Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZT) as well as antiferroe...
Thin films of ferroelectric $PbTiO_3$ (PT) and $Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZT) as well as antiferroe...
Thin films of ferroelectric PbTiO3 (PT) and Pb(Zr0.5Ti0.5)O3 (PZT) as well as antiferroelectric PbZr...
(100)-oriented LaNiO3 (LNO) thin films were grown on Si substrates by a sol-gel method followed by a...