Epitaxial growth of LaFeO3 thin films by RF magnetron sputtering

[[abstract]]LaFeO3 (LFO) thin films were epitaxially grown on MgO(001) single-crystal substrates by RF magnetron sputtering. The epitaxial LFO films were grown with a cube-on-cube relationship and pseudo-cubic crystal when the substrate temperature was above 500°C, lower than any temperature reported before. The crystalline quality and root mean square surface roughness of the epitaxial LFO films were greatly improved by increasing the substrate temperature and the working pressure, of which the optimum values were 0.97°C and 0.58 nm, respectively. The X-ray photoelectron spectroscopy measurements showed that the La and Fe ions were trivalent when the epitaxial LFO films were grown at 500°C. The lower crystalline quality of the epitaxial films resulted primarily in the formation of a high lattice mismatch and a difference in the crystal structures between the films and substrates.[[fileno]]2020301010049[[department]]材料科學工程學