[[abstract]]High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (STO) substrates with RF-magnetron sputtering deposition at substrate temperatures in a range 150-650 ° C. Azimuthal scans around the surface Bragg peak of the film and lattice images from a high-resolution transmission electron microscope (HRTEM) show that a well epitaxial relationship between film and substrate is achievable through RF sputtering growth. BaTiO3/SrTiO3 (BTO/STO) artificial superlattices subsequently deposited on LNO-coated STO substrates with RF sputtering were found also to have a large dielectric constant and a small dissipation factor.[[fileno]]2020326010010[[department]]材料科學工程學
[[abstract]]Highly (100)-oriented thin films of PbTiO3 were prepared on (100)-textured LNO/Pt/Ti/SiO...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a conductive buffer layer for the deposition ...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a bottom electrode for the deposition of 50-n...
[[abstract]]High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (...
[[abstract]]High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (...
[[abstract]]Artificial superlattices consisting of ferroelectric BaTiO3 (BTO), and conductive LaNiO3...
[[abstract]]Artificial superlattices consisting of ferroelectric BaTiO3 (BTO) and conductive LaNiO3 ...
[[abstract]]An artificial superlattice of BaTiO3/LaNiO3 (BTO/LNO) was grown epitaxially on an Nb-dop...
[[abstract]]Artificial superlattices consisting of dielectric Ba0.48Sr0.52TiO3 (BST) and conductive ...
[[abstract]]Magnetic oxide superlattices consisting of ferromagnetic oxide La2/3Ca1/3MnO3 (LCMO) and...
[[abstract]]Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a conductive buffer layer for the deposition ...
[[abstract]]Characteristics of LaNiO3 (LNO) thin films deposited by rf sputtering process were compa...
[[abstract]]We formed strained artificial superlattices of BaTiO3/LaNiO 3(BTO/LNO) and (Ba0.48Sr0.52...
[[abstract]]The onset of lattice strain relaxation against the number of bilayers (N) in an epitaxia...
[[abstract]]Highly (100)-oriented thin films of PbTiO3 were prepared on (100)-textured LNO/Pt/Ti/SiO...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a conductive buffer layer for the deposition ...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a bottom electrode for the deposition of 50-n...
[[abstract]]High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (...
[[abstract]]High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (...
[[abstract]]Artificial superlattices consisting of ferroelectric BaTiO3 (BTO), and conductive LaNiO3...
[[abstract]]Artificial superlattices consisting of ferroelectric BaTiO3 (BTO) and conductive LaNiO3 ...
[[abstract]]An artificial superlattice of BaTiO3/LaNiO3 (BTO/LNO) was grown epitaxially on an Nb-dop...
[[abstract]]Artificial superlattices consisting of dielectric Ba0.48Sr0.52TiO3 (BST) and conductive ...
[[abstract]]Magnetic oxide superlattices consisting of ferromagnetic oxide La2/3Ca1/3MnO3 (LCMO) and...
[[abstract]]Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a conductive buffer layer for the deposition ...
[[abstract]]Characteristics of LaNiO3 (LNO) thin films deposited by rf sputtering process were compa...
[[abstract]]We formed strained artificial superlattices of BaTiO3/LaNiO 3(BTO/LNO) and (Ba0.48Sr0.52...
[[abstract]]The onset of lattice strain relaxation against the number of bilayers (N) in an epitaxia...
[[abstract]]Highly (100)-oriented thin films of PbTiO3 were prepared on (100)-textured LNO/Pt/Ti/SiO...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a conductive buffer layer for the deposition ...
[[abstract]]Sputter-deposited LaNiO3 (LNO) was used as a bottom electrode for the deposition of 50-n...