Temperature dependence of the heterojunction band offset: Si on InP(110)

[[abstract]]The authors present a photoemission study of the initial growth stages of amorphous Si on the InP(110) cleaved surface, performed at 120 K and compared with the room-temperature (RT) results. Deposition at low temperature gives a larger valence-band discontinuity with respect to RT and high-temperature (280°C) growth. This effect is explained by the smaller outdiffusion of In atoms in the silicon overlayer.[[fileno]]2060117010140[[department]]工程與系統科學