Improvement of radiation hardness in poly-Si gate MOS capacitor by use of amorphous Si

[[abstract]]A poly-Si gate electrode formed by amorphous-Si film is proposed and demonstrated to improve the radiation hardness in MOS capacitors. The improvement of radiation hardness is due to the increase of compressive stress in the oxide. As little change in the device fabrication process is required, it should be useful in practice.[[fileno]]2060110010046[[department]]工程與系統科學