[[abstract]]We study the K/beta-SiC(100) c(4x2) surface by atom-resolved scanning tunneling microscopy and spectroscopy, and synchrotron radiation-based photoemission spectroscopy. At intermediate coverages, the K atoms are grouped by pairs around Si dimers at pedestal sites, in a 2x3 long-range ordering leaving 1/3 of the pedestal sites unoccupied, while keeping the semiconducting c(4x2) surface unchanged as identified by tunneling through the K overlayer. At saturation, additional K atoms adsorb on remaining pedestal sites and act as atomic "contacts" between two K pairs, leading to K atom chain formation in a 2x1 metallic surface.[[fileno]]2060117010098[[department]]工程與系統科學
Three reconstructed 6H-SiC(0001) surfaces, including a Si-rich 3 x 3 surface, a C-rich 6 root 3 x 6 ...
Graphene, the first truly 2D material to be isolated, is host to a wealth of remarkable properties. ...
The electronic structure of the Ba/SiC(111)-8° interface has been studied in detail in situ in an ul...
International audienceSilver (Ag) atom interaction on beta-SiC(100) surface reconstructions is inves...
The atomic structure of the carbon nanomesh template (the so-called 6÷3×6÷3R30° reconstruction) on t...
We examine several different reconstructions of the fl-SiC(100) surface by the ab initio Car-Parrine...
International audienceWe investigate clean and atomic hydrogen exposed beta-SiC(100) 3 x 2 surfaces ...
International audienceSilicon carbide (SiC) is nowadays a major material for applications in high po...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
Nous étudions les surfaces b-SiC(001) propres et couvertes d'hydrogène, d'argent et de sodium par mi...
Silicon carbide(SiC) nano-crystallites are formed by the thermal reaction of C-60 molecules with sil...
Nous étudions les surfaces du b-SiC(001) propres, couvertes d argent, hydrogénées et oxydées par mic...
We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spect...
We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spect...
Recent experiments on the silicon terminated (3x2)-SiC(100) surface indicated an unexpected metallic...
Three reconstructed 6H-SiC(0001) surfaces, including a Si-rich 3 x 3 surface, a C-rich 6 root 3 x 6 ...
Graphene, the first truly 2D material to be isolated, is host to a wealth of remarkable properties. ...
The electronic structure of the Ba/SiC(111)-8° interface has been studied in detail in situ in an ul...
International audienceSilver (Ag) atom interaction on beta-SiC(100) surface reconstructions is inves...
The atomic structure of the carbon nanomesh template (the so-called 6÷3×6÷3R30° reconstruction) on t...
We examine several different reconstructions of the fl-SiC(100) surface by the ab initio Car-Parrine...
International audienceWe investigate clean and atomic hydrogen exposed beta-SiC(100) 3 x 2 surfaces ...
International audienceSilicon carbide (SiC) is nowadays a major material for applications in high po...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
Nous étudions les surfaces b-SiC(001) propres et couvertes d'hydrogène, d'argent et de sodium par mi...
Silicon carbide(SiC) nano-crystallites are formed by the thermal reaction of C-60 molecules with sil...
Nous étudions les surfaces du b-SiC(001) propres, couvertes d argent, hydrogénées et oxydées par mic...
We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spect...
We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spect...
Recent experiments on the silicon terminated (3x2)-SiC(100) surface indicated an unexpected metallic...
Three reconstructed 6H-SiC(0001) surfaces, including a Si-rich 3 x 3 surface, a C-rich 6 root 3 x 6 ...
Graphene, the first truly 2D material to be isolated, is host to a wealth of remarkable properties. ...
The electronic structure of the Ba/SiC(111)-8° interface has been studied in detail in situ in an ul...