Reduction and non-uniformity of high density plasma process induced electrical degradation in MOS devices

[[abstract]]The reduction of plasma etching induced electrical degradation using oxynitride formed by rapid-thermal process (RTP) as thin gate oxide is investigated. Electrical characteristics of devices with oxynitride are much better in comparison with the conventional furnace grown gate oxide. In addition, a close relation between reliability and antenna ratio (i.e. damaging charge-up area) is also observed.[[fileno]]2060110010007[[department]]工程與系統科學